Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
作者： Eng Soon Tok , Yee-Chia Yeo , Vijay Richard D’Costa , Wei Wang , Qian Zhou
DOI: 10.1063/1.4862659
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摘要: The complex dielectric function of biaxially strained Ge1−xSnx (0 ≤ x ≤ 0.17) alloys grown on Ge (100) has been determined by spectroscopic ellipsometry from 1.2 to 4.7 eV. effect substitutional Sn incorporation and the epitaxial strain energy transitions E1, E1 + Δ1, E0′, E2 GeSn is investigated. Our results indicate that show Ge-like electronic bandstructure with all shifted downward due alloying Sn. dependence E1 E1 + Δ1 explained using deformation potential theory, values −5.4 ± 0.4 eV 3.8 ± 0.5 eV are obtained for hydrostatic shear potentials, respectively.
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