Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide
作者： A. V. Tumarkin , M. V. Zlygostov , I. T. Serenkov , V. I. Sakharov , V. V. Afrosimov
DOI: 10.1134/S1063783418100293
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摘要: The initial stages of growth barium zirconate titanate and stannate ferroelectric films on single-crystal sapphire silicon carbide are studied for the first time. choice substrates is dictated by possibility using such structures in ultra-high frequency devices. discontinuous BaZrxTi1–xO3 found to be mediated gas phase mass transport mechanism temperature range. For deposition BaSnxTi1–xO3 films, switches at ~800°C from surface diffusion diffusion; also, deposited have considerably different elemental composition. formation an intermediate SiO2 layer noted during oxide this substrate, its thickness depending temperature.
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