Spreading resistance profile correction scheine for thin layers on a conducting boundary
作者： M. Weidner , G. Ritter
关键词:
摘要: A simple model is derived to determine steep doping profiles on a low-resistance substrate from spreading resistance measurements bevel edge. Dickey's capacitance analogue method which concerned with homogeneously doped thin layer conducting boundary extended multilayer geometry. This approximation discussed for the example of autodoping in silicon epitaxial layers highly arsenic-doped substrates. Es wird ein einfaches Modell aufgestellt, um steile Autodopingprofile auf einem niederohmigen Substrat aus Messungen des Ausbreitungswiderstandes am Schragschliff zu bestimmen. Kapazitatsanalogie, die far eine homogen dotierte danne Schicht einer leitenden Grenz schicht gilt, Mehrschichtgeometrie erweitert. Diese Naherung Autodo pingprofile dannen Silizium-Epitaxieschichten niedarohmigen, mit Arsen dotierten Siliziumsubstraten diskutiert.
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