作者: M.S. Leong , S.C. Choo , L.S. Tan
DOI: 10.1016/0038-1101(79)90014-5
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摘要: Abstract This paper presents a treatment of the mixed boundary value problem that arises in determining spreading resistance an inhomogeneous slab backed by perfectly conducting substrate. It is shown inhomogeneity enters into through weight function pair dual integral equations, and this same as integration factor occurs previous approximate solutions based on assumed source current distributions. Except for difference function, equations are similar to those homogeneous slab. Calculations performed structures with exponential resistivity profiles, results used determine accuracy three methods currently available calculations semiconductor device structures.