作者: Wei-Choon Ng , Yang Liu , Karl Hess
DOI: 10.1007/S10825-004-0315-9
关键词:
摘要: A lattice temperature model is derived for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on carrier transport and the conservation of energy. Peltier heat caused by bandedge quasi-Fermi level discontinuities at a heterojunction. However, considering device size, needs to be distributed not just generated interface, otherwise, an anomolous spike in will occur. We have developed novel treatment heterojunction use Monte Carlo simulation. found major contributor, it results rapid high rise separate confinement heterostructure (SCH) region laser diode. also shown that thermal conductivities materials with mobilities must included densities because they contribute additional spreading Subsequently, this coupled self-consistently electronic optical solvers form complete simulator VCSELs. Self-heating causes fast when VCSEL operated under continuous wave conditions, causing resonant wavelength changes eventual rollover. The shift has been mainly heating Bragg reflectors even though peak occurs within SCH region. Possible physical factors rollover examined our simulator. Auger recombination process one main 980 nm VCSELs while photon lifetime factor determining position achieved very good match between simulated experimental data.