Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling

摘要: The coupled transport of heat and electrical current, or thermoelectric phenomena, can strongly influence the temperature distribution figures merit for phase-change memory (PCM). This paper simulates PCM devices with careful attention to resulting impact on programming current during reset operation. electrothermal simulations consider Thomson heating within material Peltier at electrode interface. Using representative values Seebeck coefficients extracted from our past measurements these properties, we predict a cell increase 44% decrease in 16%. Scaling arguments indicate that phenomena becomes greater smaller dimensions due enhanced thermal confinement. work estimates scaling this reduction as contact areas are reduced down 10 nm × nm. Precise understanding their device performance is critical part design strategies.