Computational Analysis of Rupture-Oxide Phase-Change Memory Cells
作者： Nadim Kan'an , Azer Faraclas , Nicholas Williams , Helena Silva , Ali Gokirmak
关键词:
摘要: The potential of rupture-oxide mushroom phase-change memory cells is assessed through 2-D finite element analysis using electro-thermal models with temperature-dependent material parameters, coupled a circuit model for access transistors. cell structure used the simulations consists 100-nm thick Ge2Sb2Te5 layer separated from 20-nm wide TiN bottom heater by 3-nm SiO2 layer. ruptured oxide modeled as conductive filament at center heater. effects supply voltage, gate transistor width, diameter and resistivity are studied read/reset/read sequence enabled dynamic amorphization model. simulation results show that can be operated smaller voltages, currents widths compared to their conventional counterparts same resistance contrast. Moreover, it shown performance further improved narrower more resistive filaments.
harvard.edu
researchgate.net 
sci-hub.se 参考文章(19)
Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, Cheol Seong Hwang, Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation Applied Physics Letters. ,vol. 97, pp. 132107- ,(2010) , 10.1063/1.3494084
David G. Cahill, Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices Applied Physics Letters. ,vol. 94, pp. 243103- ,(2009) , 10.1063/1.3155202
Kadir Cil, Faruk Dirisaglik, Lhacene Adnane, Maren Wennberg, Adrienne King, Azer Faraclas, Mustafa B. Akbulut, Yu Zhu, Chung Lam, Ali Gokirmak, Helena Silva, Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements IEEE Transactions on Electron Devices. ,vol. 60, pp. 433- 437 ,(2013) , 10.1109/TED.2012.2228273
Adam Cywar, Ali Gokirmak, Helena Silva, Finite element modeling of a nanowire-based oscillator achieved through solid–liquid phase switching for GHz operation Solid-state Electronics. ,vol. 78, pp. 97- 101 ,(2012) , 10.1016/J.SSE.2012.05.067
Jaeho Lee, Mehdi Asheghi, Kenneth E Goodson, Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling Nanotechnology. ,vol. 23, pp. 205201- ,(2012) , 10.1088/0957-4484/23/20/205201
D. Tio Castro, L. Goux, G.A.M Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F.J. Jedema, M.A.A. in `t Zandt, R.A.M. Wolters, D.J. Gravesteijn, M.A. Verheijen, M. Kaiser, R.G.R. Weemaes, D.J. Wouters, Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells international electron devices meeting. pp. 315- 318 ,(2007) , 10.1109/IEDM.2007.4418934
Carlo Bergonzoni, Massimo Borghi, Elisabetta Palumbo, Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments IEEE Transactions on Electron Devices. ,vol. 59, pp. 283- 291 ,(2012) , 10.1109/TED.2011.2175736
Zhaohui Fan, David E. Laughlin, Three Dimensional Crystallization Simulation and Recording Layer Thickness Effect in Phase Change Optical Recording Japanese Journal of Applied Physics. ,vol. 42, pp. 800- 803 ,(2003) , 10.1143/JJAP.42.800
Roberto Fallica, Jean-Luc Battaglia, Simone Cocco, Cristiano Monguzzi, Andrew Teren, Claudia Wiemer, Enrico Varesi, Raimondo Cecchini, Andrea Gotti, Marco Fanciulli, Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells† Journal of Chemical & Engineering Data. ,vol. 54, pp. 1698- 1701 ,(2009) , 10.1021/JE800770S
A. Faraclas, N. Williams, F. Dirisaglik, K. Cil, A. Gokirmak, H. Silva, Operation Dynamics in Phase-Change Memory Cells and the Role of Access Devices ieee computer society annual symposium on vlsi. pp. 78- 83 ,(2012) , 10.1109/ISVLSI.2012.48