Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
作者： D. Tio Castro , L. Goux , G.A.M Hurkx , K. Attenborough , R. Delhougne
DOI: 10.1109/IEDM.2007.4418934
关键词: Scaling 、 Materials science 、 Voltage 、 Anode 、 Contact area 、 Electrical engineering 、 Reset (computing) 、 Fine line 、 Mechanics 、 Phase-change memory 、 Phase-change material
摘要: We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift molten zone during RESET programming towards anode contact, as consequence phase change material (PCM) design at contact area has significant influence on program conditions. First statistical studies showed reduction minimum Reset currents by ~5% Set voltages -28% when PCM extensions around are used instead fine line contacts. remains important with further cell scaling.
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