A new analytical model for the thermal resistance of deep-trench bipolar transistors
作者： T. Vanhoucke , G.A.M. Hurkx
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摘要: A new analytical model for the thermal resistance, temperature profile, and heat flow of deep-trench isolated (DTI) transistors is presented by taking finite through trenches into account. The able to distinguish between different contributions resistance DTI structure allows identification most dominant component. detailed analysis substrate contribution shows that overestimated in existing models. Results are compared with experimental data as well numerical simulations show a good agreement. can be used process optimization circuit simulator.
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