作者: D Dimitrov , H.-P.D Shieh
DOI: 10.1016/J.MSEB.2003.10.110
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摘要: Nitrogen and oxygen doped co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) erasabili ty of disks improved being up to 52 35 dB, respectively, using an appropriate nitrogen doping or co-doping concentration in layer. Optical with layer be superior characteristics then single disks. © 2003 Elsevier B.V. All rights reserved.