Influence of sputtering parameters on microstructure and mechanical properties of GeSbTe films
作者： Yong-zhong FU
DOI: 10.1016/S1003-6326(08)60030-8
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摘要: Abstract GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering, and the effects of sputtering power surface topography anti-compression properties studied with atomic force microscope(AFM) nanoindenter. Meanwhile, mechanical oxygen impurity also investigated. The results indicate that proper is important for obtaining high compact structure low roughness, which present good load-support capacity. Although effect not very significant as a whole, certain dosage can relax internal stress, thereby hardness drops slightly.
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