Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device
作者： Daolin Cai , Zhitang Song , Houpeng Chen , Xiaogang Chen
DOI: 10.1016/J.SSE.2010.12.001
关键词:
摘要: Abstract A temperature model of the phase change memory (PCM) cell having Ge 2 Sb Te 5 (GST) layer has been proposed and demonstrated based on a thermal physical electrical characteristics. Calculating radius PCM with different reset voltage pulse voltage–current curves by equation, crystalline fraction can be got. It is found that active region increase increasing. The experimental results are consistent simulation results.
harvard.edu
irgrid.ac.cn
elsevier.com参考文章(11)
K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. Wuttig, Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5 Journal of Applied Physics. ,vol. 96, pp. 5557- 5562 ,(2004) , 10.1063/1.1803612
S. Senkader, C. D. Wright, Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices Journal of Applied Physics. ,vol. 95, pp. 504- 511 ,(2004) , 10.1063/1.1633984
Yan Liu, Zhitang Song, Yun Ling, Yuefeng Gong, Songlin Feng, Three-Dimensional Numerical Simulation of Phase-Change Memory Cell with Probe like Bottom Electrode Structure Japanese Journal of Applied Physics. ,vol. 48, pp. 024502- ,(2009) , 10.1143/JJAP.48.024502
Horatio Scott Carslaw, John Conrad Jaeger, Conduction of Heat in Solids ,(1959)
Stanford R. Ovshinsky, Reversible Electrical Switching Phenomena in Disordered Structures Physical Review Letters. ,vol. 21, pp. 1450- 1453 ,(1968) , 10.1103/PHYSREVLETT.21.1450
Alexander V. Kolobov, Paul Fons, Anatoly I. Frenkel, Alexei L. Ankudinov, Junji Tominaga, Tomoya Uruga, Understanding the phase-change mechanism of rewritable optical media Nature Materials. ,vol. 3, pp. 703- 708 ,(2004) , 10.1038/NMAT1215
Zhimei Sun, Jian Zhou, Rajeev Ahuja, None, Structure of phase change materials for data storage. Physical Review Letters. ,vol. 96, pp. 055507- 055507 ,(2006) , 10.1103/PHYSREVLETT.96.055507
A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez, Electronic switching in phase-change memories IEEE Transactions on Electron Devices. ,vol. 51, pp. 452- 459 ,(2004) , 10.1109/TED.2003.823243
Ken'ichiro Sonoda, Atsushi Sakai, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue, A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization IEEE Transactions on Electron Devices. ,vol. 55, pp. 1672- 1681 ,(2008) , 10.1109/TED.2008.923740
X.Q. Wei, L.P. Shi, R. Walia, T.C. Chong, R. Zhao, X.S. Miao, B.S. Quek, HSPICE macromodel of PCRAM for binary and multilevel storage IEEE Transactions on Electron Devices. ,vol. 53, pp. 56- 62 ,(2006) , 10.1109/TED.2005.860645