作者: A. N. Akimov , A. E. Klimov , V. S. Epov
DOI: 10.1134/S1063782618120035
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摘要: At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy BaF2(111) substrates. The obtained results agree with experiments effect of treatment surface variation 103 times or more. qualitative level, model considered which assumes substantial contribution localized states space charge formed mode due injection carriers from contacts.