Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk
作者： Valentine V. Volobuev , Partha S. Mandal , Marta Galicka , Ondřej Caha , Jaime Sánchez-Barriga
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摘要: The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface the level. Tight binding calculations identify their origin as Fermi level pinning by trap states surface.
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