Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
作者： Z Chine , H Fitouri , I Zaied , A Rebey , B El Jani
DOI: 10.1088/0268-1242/25/6/065009
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摘要: The optical properties of GaAsBi layers grown by atmospheric pressure metalorganic vapor phase epitaxy on p-type GaAs substrates and annealed at different temperatures are investigated photoreflectance photoluminescence spectroscopies. Photoreflectance spectra show no significant shift in the band gap energy GaAs0.965Bi0.035 with annealing temperature except 600 °C for which reaches a minimum value corresponding to red 60 meV. low broad centered ~1.36 eV. dependence 1.36 eV emission addition increasing intensity this bismuth flow suggests that it is originated from Bi clusters or complex defects probably located surface/interface epilayer.
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