Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy
作者： XY Wu , K Wang , WW Pan , P Wang , YY Li
DOI: 10.1088/0268-1242/30/9/094014
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摘要: The effect of post-growth rapid thermal annealing on structural and optical properties InP1-xBix thin films was investigated. InPBi shows good stability up to 500 °C a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from strain relaxation are observed at about 600 °C. sample annealed 800 unexpected spectrum different energy transitions.
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