Thermal stability of amorphous TaIr between YBaCuO and silicon
作者： R. De Reus , F.W. Saris , T.S. Baller
DOI: 10.1016/0022-5088(88)90279-2
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摘要: Abstract Amorphous buffer layers of TaIr, sandwiched between YBaCuO thin films and Si(100) substrates, prevent interface reactions during annealing in oxygen ambient up to 800 °C. Above 650 °C, amorphous TaIrO, which is formed annealing, crystallizes into Ta 2 O 5 IrO , pinholes the film layer are observed. Reaction with silicon does not occur after 900
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