Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT
作者： F. El-Mellouhi , N. Mousseau
DOI: 10.1007/S00339-006-3761-3
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摘要: We use the SIEST-A-RT simulation technique to study in detail arsenic vacancy self-diffusion mechanisms GaAs. Vacancy self diffusion is of fundamental importance for understanding semiconductor nanostructure formation. find that dominant mechanism both -1 and +1 charge states plane-passing jump second neighbour. Contrary Ga vacancy, height activation barrier essentially independent state. Other, less probable, are also discussed.
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