作者: Takeo Oku , Hirotaka R. Kawata , Akira Otsuki , Masanori Murakami
DOI: 10.1016/B978-0-444-81889-8.50034-1
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摘要: Contact resistances of NiGe Ohmic contacts were reduced by adding a small amount In or Au to the contacts. These had excellent thermal stability, smooth surface, and shallow diffusion depth. A model for current transport NiGe–based was proposed, which explained well dependencies contact on microstructure at GaAs/metal interface.