Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
作者： T. S. Kuan , P. E. Batson , T. N. Jackson , H. Rupprecht , E. L. Wilkie
DOI: 10.1063/1.332011
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摘要: … Since the NiAs phase is agglomerated at the Ni-Au-Ge/GaAs interface as observed in this work, the contact interface thus consists of "good" contact areas (Ni2GeAs) and "poor" contact …
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