A New Dicing Method for Semiconductor Wafer

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DOI: 10.3795/KSME-A.2003.27.8.1309

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摘要: The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in such as blade, wafer, cutting water conditions. Moreover we can not apply this method GaN because is harder than other SiO2, GaAs, GaAsP, AlGaAs. In order overcome problem, development new determination necessary. This paper describes fixed scriber precision servo mechanism - scribing depth, force, inclined angle, speed, factor for replacement machine scriber.

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