Application of Auger electron spectroscopy and principal component analysis to the study of the Pd/c-Si and Pd/a-Si interfaces

作者: R. Vidal , J. Ferrón

DOI: 10.1016/0169-4332(88)90066-9

关键词:

摘要: Abstract The use of Auger electron spectroscopy and principal component analysis for the study Pd/c-Si Pd/a-Si interfaces are discussed in combination with target transformation technique to extract spectra unidentified compounds found depth profiling process. Our results reveal existence a Si-rich compound both while we that Pd 2 Si is spontaneously formed (i.e. without annealing) only at interface.

参考文章(23)
R.M. Tromp, E.J. van Loenen, M. Iwami, R.G. Smeenk, F.W. Saris, F. Nava, G. Ottaviani, Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature Surface Science. ,vol. 124, pp. 1- 25 ,(1983) , 10.1016/0039-6028(83)90332-1
PS Ho, PE Schmid, H Föll, None, Stoichiometric and structural origin of electronic states at the Pd2Si-Si interface Physical Review Letters. ,vol. 46, pp. 782- 785 ,(1981) , 10.1103/PHYSREVLETT.46.782
L. S. Hung, E. F. Kennedy, C. J. Palmstro/m, J. O. Olowolafe, J. W. Mayer, H. Rhodes, Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films Applied Physics Letters. ,vol. 47, pp. 236- 238 ,(1985) , 10.1063/1.96230
Edmund R. Malinowski, Factor Analysis in Chemistry ,(1980)
R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon, Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H Journal of Vacuum Science and Technology. ,vol. 19, pp. 685- 688 ,(1981) , 10.1116/1.571085
G. Ottaviani, K. N. Tu, J. W. Mayer, Barrier heights and silicide formation for Ni, Pd, and Pt on silicon Physical Review B. ,vol. 24, pp. 3354- 3359 ,(1981) , 10.1103/PHYSREVB.24.3354
JL Freeouf, GW Rubloff, PS Ho, TS Kuan, None, Reactive Schottky barrier formation: The Pd/Si interface Journal of Vacuum Science and Technology. ,vol. 17, pp. 916- 919 ,(1980) , 10.1116/1.570616
John A. Roth, C. R. Crowell, Application of Auger electron spectroscopy to studies of the silicon/silicide interface Journal of Vacuum Science and Technology. ,vol. 15, pp. 1317- 1324 ,(1978) , 10.1116/1.569759
M. J. Thompson, N. M. Johnson, R. J. Nemanich, C. C. Tsai, Silicide formation in Pd‐a‐Si:H Schottky barriers Applied Physics Letters. ,vol. 39, pp. 274- 276 ,(1981) , 10.1063/1.92670
Stephen W. Gaarenstroom, Principal component analysis of Auger line shapes at solid—solid interfaces Applications of Surface Science. ,vol. 7, pp. 7- 18 ,(1981) , 10.1016/0378-5963(81)90056-8