作者: R. Vidal , J. Ferrón
DOI: 10.1016/0169-4332(88)90066-9
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摘要: Abstract The use of Auger electron spectroscopy and principal component analysis for the study Pd/c-Si Pd/a-Si interfaces are discussed in combination with target transformation technique to extract spectra unidentified compounds found depth profiling process. Our results reveal existence a Si-rich compound both while we that Pd 2 Si is spontaneously formed (i.e. without annealing) only at interface.