3-d non-volatile memory device and method of manufacturing the same
作者： Ki Hong Lee , Sung Jin Whang
DOI:
关键词:
摘要: A three-dimensional (3-D) non-volatile memory device includes a plurality of word line structures extended in parallel and including interlayer dielectric layers lines that are alternately stacked over substrate, channels protruding from the substrate configured to penetrate lines, an air gap formed between structures.
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