Process for fabricating a substrate of the silicon-on-insulator type
作者： Eric Neyret , François Boedt
DOI:
关键词:
摘要: The invention relates to a process for fabricating substrate (6) of the SOI (silicon on insulator) type, comprising thin silicon layer (11), surface roughness which is uniform, and buried SiO2 layer, thickness uniform. This noteworthy in that it comprises following steps, consisting in: a) atomic or ionic species are co-implanted donor (1), so as form therein weakened zone (10) forms boundary between said (11) remainder (12); b) this (1) bonded (3) by molecular adhesion, (2) oxide being interposed two; c) and/or (12) detached along (10), mainly mechanically; d) carrying out at least one finishing step long thermal annealing, gaseous atmosphere hydrogen argon, temperature 950°C but not exceeding 1100°C.
lens.org 参考文章(9)
Hideki Nishihata, Nobuyuki Morimoto, Method for producing soi wafer ,(2004)
Kiyofumi Sakaguchi, Takao Yonehara, Process for transferring a semiconductor layer using silicon on insulator (SOI) technology ,(1997)
Toshiaki Ono, Akihiko Endo, Satoshi Murakami, SOI wafer production method ,(2006)
Christophe Maleville, Eric Neyret, Mohammed Nadia Ben, Procédé d'obtention d'une couche mince de qualité accrue par co-implantation et recuit thermique. ,(2004)
Naoto Tate, Herve Andre Auberton, Hiroji Aga, Thierry Barge, Treatment of substrates for microelectronics or opto-electronics includes annealing in a reducing atmosphere and chemical mechanical polishing ,(1999)
Ian Cayrefourcq, Blanchard Christelle Lagahe, Nguyet Phuong Nguyen, Catastrophic transfer of thin film at low temperature after co-implantation, for microelectronics, micro-mechanical, optical and integrated electronic applications ,(2003)
Maleville Christophe, Neyret Eric, Improving free surface state of semiconductor material slice comprises smoothing with rapid thermal annealing preceded by pre-treatment to prevent stitching ,(2003)
Daval Nicolas, TRAITEMENT D'UNE COUCHE EN SI1-yGEy PRELEVEE ,(2007)
Akihiko Endo, Etsurou Morita, Hidehiko Okuda, Tatsumi Kusaba, Method for manufacturing SOI substrate ,(2006)