Electrosynthesis and characterisation of n-WSe2 thin films
作者： J. Jebaraj Devadasan , C. Sanjeeviraja , M. Jayachandran
DOI: 10.1016/S0254-0584(02)00095-0
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摘要: Abstract Tungsten diselenide (WSe2) semiconductor thin films were electrodeposited by the galvanostatic route. Polycrystalline n-WSe2 deposited on transparent conducting oxide (TCO) coated glass substrates. The variation of growth rate with temperature has been studied. Both as-deposited and annealed showed hexagonal structure. optical absorption studies a direct band gap nature WSe2 films. composition film was found EDAX analysis. surface morphology studied scanning electron microscopy. type from Mott–Schottky plot as n-type confirmed hot probe technique. parameters like acceptor density flatband potential reported study plots.
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