Structural, optical and microscopic studies of tungsten substituted molybdenum diselenide thin films

摘要: Abstract A modified chemical bath deposition method has been developed to prepare Mo1−xWxSe2 layer type semiconductor thin films. Various preparative conditions of the films are outlined. The were characterized by X-ray diffraction, optical absorption, electrical measurements and thermoelectric techniques. grown found be uniform, well adherent substrate brown in color. diffraction (XRD) study indicates polycrystalline nature single hexagonal phase over whole range composition. Analysis absorption spectra gave direct band gap, magnitude which increases slightly as tungsten content film is increased conductivity at room temperature was 10−5 10−2 (Ω cm)−1. All show n-type conductivity.