A phonon depletion effect in ultrathin heterostructures with acoustically mismatched layers

摘要: We demonstrate theoretically that modification of the acoustic phonon spectrum in semiconductor heterostructures with large impedance mismatch between core and cladding layers may lead to strong depletion layer. The latter is achieved if heterostructure parameters are properly tuned, i.e., structure thickness nanometer scale ensure quantization acoustically “softer” than Using a numerical solution elasticity equation, we show one can achieve conditions when almost all modes squeezed exception small fraction phonons very wave vectors (q⩽0.3nm−1). predicted effect layer mismatched increased carrier mobility certain regions as well improved thermal management heterostructure-based devices.