Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon
作者： Wonchul Choi , Dongseok Jun , Soojung Kim , Mincheol Shin , Moongyu Jang
DOI: 10.1016/J.ENERGY.2015.01.024
关键词:
摘要: Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation heterojunction numbers from 3 to 12 layers. For fabrication multi-layered structure, platinum silicon layers are repeatedly sputtered on (100) bulk substrate rapid thermal annealing is carried out for silicidation. The manufactured show ohmic current–voltage (I–V) characteristics. Seebeck coefficient Si evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas layered device 201.8 ± 9.1 μV/K. As temperature increases 400 K, 237.2 ± 4.7 μV/K 277.0 ± 1.1 μV/K devices, respectively. increase in structure mainly attributed electron filtering effect due Schottky barrier Pt-silicide/silicon interface. At conductivity reduced by about half magnitude compared which shows efficient suppression phonon propagation using hetero-junctions.
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