Angled implantation for removal of thin film layers
作者： Michael L. Hattendorf , Justin K. Brask , Justin S. Sandford , Jack T. Kavalieros , Matthew V. Metz
DOI:
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摘要: Embodiments of the invention provide a device with reverse-tapered gate electrode and dielectric layer length close to that length. In an embodiment, this may be done by altering portions blanket one or more angled ion implants, then removing altered layer.
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