Stress in hydrogenated amorphous silicon determined by X-ray diffraction

摘要: Abstract The residual strain in an a-Si:H layer has been directly determined with X-ray diffraction techniques from variations the angle of first amorphous peak using CuKα radiation. was deposited by HW-CVD on glass substrates at a growth temperature 300 °C, and is known previous studies to be highly disordered. It found have average compressive stress 750 MPa, c-Si lattice parameter as reference, typical values elastic constants for a-Si:H, increasing strongly towards surface.