Full spin-orbit coefficient in III-V semiconductor wires based on the anisotropy of weak localization under in-plane magnetic field

摘要: Because of the one-dimensional confinement electron momentum in narrow semiconductor wires, spin relaxation is suppressed irrespective presence spin-orbit (SO) interaction. In quantum transport, weak localization corrections to conductivity are reflected as relaxation, which makes quantification SO strength difficult because correction theory requires antilocalization when evaluating coefficients. Narrow wires with strong interaction potential platform for Majorana particles and parafermions topological electronics computation, so revealing wire structures beneficial. Herein, we present full coefficient under InGaAs-based wires. Using anisotropic observed an in-plane external magnetic field various orientations, one can ascertain relative ratio between Rashba ($\ensuremath{\alpha}$) linear Dresselhaus (${\ensuremath{\beta}}_{1}$) coefficients no fitting. Furthermore, find that widely tuning profile well through top gate expose a Rashba-predominant region magnetoconductance, where $\ensuremath{\alpha}$ value be extracted reliably from two-dimensional theory. Finally, quantify including Rashba, Dresselhaus, cubic terms wire.