作者: M. A. Mondragon , C. Y. Chen , L. E. Halliburton
DOI: 10.1063/1.341156
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摘要: Electron‐spin resonance (ESR) has been used to monitor the growth of aluminum‐associated trapped‐hole centers (i.e., [AlO4 ]0 centers) in high‐purity cultured quartz during a sequence irradiations with 1.7‐MeV electrons. Production curves were obtained at three dose rates (3.6, 36, and 360 krad/min) for series crystals furnished by commercial growers quartz. The shape each curve depended directly on rate origin quartz; many them had an initial rapid maximum concentration followed 5%–25% decrease as number defects approached equilibrium value higher dose. We suggest that complex shapes these defect production curves, also their variation between samples, is caused competition formation /H+ centers. At rates, 4–40 Mrad/min range, no dependence was observed.