THz direct detector with 2D electron gas periodic structure absorber

摘要: We describe the performance of a direct detector that uses high mobility 2D electron gas (2DEG) formed at AlGaAs/GaAs interface as frequency selective absorber. The 2DEG mesa-structure is etched to form planar periodic structure with resonant absorption properties in submm - THz region. Electrons are heated by incoming radiation above lattice temperature and hot electrons measured Superconducting (S-2DEG-S) tunnel junctions. estimated noise equivalent power for such 100 mK order 10-18 W/Hz1/2. In this paper we present spectral measurements simulated results 4.2 K mesa geometry. thermal conductance time constant studied 450 mK-4.2 K. measure an electron-phonon on 10-17 W/K per which gives low value heat relative normal metal absorbers due density. These devices have combination sensitivity speed makes them possible candidates components future astrophysical instruments.