Production of ions from solids using chemically assisted sputtering
作者： S. S. Rosenblum , K. J. Doniger , J. C. Helmer
DOI: 10.1063/1.1141930
关键词:
摘要: Boron ions are universally used as a p‐type dopant for ion implantation of silicon wafers. In today’s technology, produced from gases in hot filament magnetron plasma, known the Freeman source, using BF3 feedstock. Two problems that corrodes fluoride environment and is quite toxic. order to overcome these limitations, we have developed cold cathode source which uses conductive boride liner (B4C B6Si been successfully), nontoxic gas feed (such CF4 or SF6), produces boron fraction yields high 15% beam extraction experiments performed on low voltage test stand. This comparable performance obtained gas.
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