High‐resolution X‐ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation

摘要: The presently studied substrates for manufacturing freestanding silicon epitaxial layers contained two porous with different porosities. upper of significantly lower porosity after annealing provided smooth surfaces deposition and the deeper greater enabling easier exfoliation foil. layered structures have been by means synchrotron diffraction topography recording rocking curves from small local area. most effective method revealing defects in exfoliated were Bragg-case projection topographs ‘zebra’ pattern monochromatic beam providing a map sample curvature. samples additionally examined high-resolution diffractometry reflectometry. The without strong narrow maximum at low angle side substrate common both layers. probable effect layer is decrease lattice parameter porosity, which maxima located on maximum. topographic investigations revealed some deposited layers, connected irregularities annealed layer. Very characteristic large caverns, overgrown process diameters several tenths micrometers (possibly submicron caverns), associated bundles dislocations resolved topographs. In thickness, long black white stripes along also observed, probably stacking faults dislocation loops. Copyright © 2015 John Wiley & Sons, Ltd.