作者: Miloš Nesládek , Dominique Tromson , Christine Mer , Philippe Bergonzo , Pavel Hubik
DOI: 10.1063/1.2211055
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摘要: Electrical transport properties of thin boron doped nanocrystalline diamond films with thicknesses 60–500nm have been studied. The Raman spectra measured exhibit Fano resonances, characteristic for B concentrations close to the metal-to-insulator transition. Upon increasing concentration, sp2 carbon related resonances vanish. In such boron-doped films, a positive magnetoresistance could be observed at liquid helium temperatures. show conductivity similar that B-doped epitaxial without any significant contribution grain boundary transport, leading superconductive transition in ∼1.66K.