Prospect for high brightness III–nitride electron emitter
作者： Francisco Machuca , Y. Sun , Z. Liu , K. Ioakeimidi , P. Pianetta
DOI: 10.1116/1.1321270
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摘要: We describe p-type gallium nitride (GaN) as a candidate for high brightness photocathodes. Experiments utilizing photoemission spectroscopy and quantum yield measurements were performed on GaN films to characterize various cesium oxygen activations. Quantum efficiencies of 0.1%–4% obtained in reflection the cesiated 0.5 μm thick 25%–50% 0.1 films. The corresponding emission currents are 142–300 nA 0.7–1.3 μA This results an increase several orders magnitude current from starting Furthermore, initial desorption measurement was order evaluate Cs binding strength relative GaAs. observe bound surface (0001_) at 700 °C completely desorbed 450 °C (100) GaAs surface. Finally, alternate barium activation is included preliminary comparison with
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