Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing
作者： Hiroyuki Watanabe , Hirofumi Miki , Shigeru Sugai , Koji Kawasaki , Toshihide Kioka
DOI: 10.1143/JJAP.33.4491
关键词:
摘要: We have investigated the crystallization of a-Si films by means pulsed KrF excimer laser annealing as a function irradiation energy density (E L), using transmission electron microscopy (TEM), Raman scattering spectroscopy and secondary ion mass spectrometry (SIMS). The grain size increased gradually at 0.2–0.4 J/cm2, while drastic enlargement grains occurred with lateral growth 0.6–0.8 J/cm2. stress in decreased decrease thickness fine (FG) layer until FG finally disappeared. proposed model which high E L is controlled nucleation rate, solidification velocity, nucleus initial growth. It was found that poly-Si large ( 0.5–0.9 µm), purity C ~3×1016 cm-3) low were obtained regime J/cm2).
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