Enhanced ferroelectric properties of (111) oriented Pb(Hf0.3Ti0.7)O3 thin films deposited using self-buffered layer

摘要: Abstract Lead hafnate-titanate (PHT) thin films have been prepared via pulsed laser deposition (PLD) on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by inserting a low temperature (200–400 °C) self-buffered layer. It is found that the layers deposited at different temperatures great influence microstructure and electric properties. XRD spectra, including θ –2 ω scans, show PHT with (1 1 1) preferred orientation were successfully Compared directly high temperature, an inserted (300 °C) layer significantly enhanced electrical properties of four orders magnitude lower leakage current density (3.2 × 10 −8  A/cm 150 kV/cm), 1.5 times larger remnant polarization (2Pr = 63 μC/cm ), 0.4 smaller coercive field (2Ec = 190 kV/cm), more excellent fatigue endurance (almost no degradation after 2 × 10 10 switching cycles). The use effective approach to fabricate ferroelectric materials large long endurance.