作者: Ranjit Hawaldar , P. Merino , M. R. Correia , Igor Bdikin , José Grácio
DOI: 10.1038/SREP00682
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摘要: We report hot filament thermal CVD (HFTCVD) as a new hybrid of and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition flow rate that arises due to smart placement the substrate inside Ta wound alumina tube accompanied radical formation precracking coupled with mediated physicochemical processes like diffusion, polymerization etc., led growth. further confirmed our mechanistic hypothesis depositing Ni SiO(2)/Si HFTCVD can be extended dope various heteroatoms (H, N, B, etc.,), combine functional materials (diamond, carbon nanotubes etc.,) all other (Si, SiO(2), SiC (initiator polymerization, TFT processing) possible HFCVD CVD.