作者: Y. Hotta , T. Susaki , H. Y. Hwang
DOI: 10.1103/PHYSREVLETT.99.236805
关键词:
摘要: We have investigated the transport properties of LaVO_{3}/SrTiO_{3} Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_{2}/LaO/TiO_{2} polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. (001) p-type VO_{2}/SrO/TiO_{2} interface, formed by inserting single layer bulk metallic SrVO3 or SrO, drives interface insulating. (110) heterointerface also insulating, indicating conduction arising from electronic reconstructions.