High-spatial-resolution analysis of Ge layers in Si

摘要: Abstract This paper describes the results of preliminary experiments to characterize focused-probe properties a new 200 kV field-emission TEM/STEM. Probe currents are measured using Faraday stage. size is by high-angle annular-dark-field STEM line scans across Ge monolayer embedded coherently in single-crystal silicon. These measurements show instrument capable producing probes with full-width at half-maximum order 3nm and less least few tenths nanoampere current. sufficient execute X-ray microanalysis good signal-to-noise nanometer lengths scales. As part same set experiments, this work shows experimentally that HAADF scattering from pure amorphous silicon stronger than crystalline silicon, possibly due increased Debye-Waller factor absence chanelling effects structure.