Semiconductor integrated circuit including protective transistor protecting another transistor during processing
作者： Kouichi Hasegawa
DOI:
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摘要: A semiconductor integrated circuit has a protective NMOS transistor having drain and source respectively electrically connected to first interconnection (electrically base electrode of bipolar or gate MOS transistor) ground in floating state, upon formation the interconnection. The is formed by patterning using plasma etching after
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