Epitaxial growth method of semiconductor element

摘要: PROBLEM TO BE SOLVED: To provide an epitaxial growth method of semiconductor element in which a uniform shape can be formed epitaxially by preventing etching damage silicon peripheral insulation film being grown the surface treatment process substrate for SEG process. SOLUTION: The comprises step forming pad oxide and nitride sequentially on patterning them, trench structure exposed part filling with insulator, removing performing ion implantation well, screen regulating threshold voltage, crystal defects H2 baking process, channel growing