Method for forming transistor of semiconductor device

摘要: A method for forming a transistor of semiconductor device, including the step channel layers first and second conductive types, performing high temperature thermal process to form stabilized an epitaxial structure having super-steep-retrograde δ-doped layer by growing undoped silicon layers, treating entire surface resulting with hydrogen, on gate insulating films electrodes structures, re-oxidizing repairing damaged portions films; source/drain region low process.