Method for fabricating a semiconductor device

Tzu-Kun Ku, Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer ,(1998)

Jaim Nulman, Single anneal step process for forming titanium silicide on semiconductor wafer ,(1990)

Ebrahim Andideh, Chia-Hong Jan, Robert S. Chau, Mitch C. Taylor, Julie Tsai, Device structure and method for reducing silicide encroachment ,(1998)

Chang-Hun Lee, Takamasa Nishimura, Hideki Matsuhashi, Michio Yokoyama, Kazuya Masu, Kazuo Tsubouchi, Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor Japanese Journal of Applied Physics. ,vol. 38, pp. 5835- 5838 ,(1999) , 10.1143/JJAP.38.5835

Toshiyuki Yanagawa, 登志行 柳川, Apparatus and method for detecting mine ,(1999)

Lee Tae Gwon, Park Tae Su, Lee Wan Gyu, Jin Seong Gon, Yang Jun Mo, METHOD FOR FORMING EPITAXIAL TITANIUM SILICIDE ,(2002)

Kunihisa Taketo, Hachiman Kazuhiro, Nobusada Shiyunei, Nishida Kazuto, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE ,(2002)