Apparatus and methods for silicon oxide CVD resist planarization
作者： Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yu Jin , Mei-Yee Shek
DOI:
关键词:
摘要: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer use in media. According to embodiments application, silicon oxide formed by low temperature chemical vapor deposition is used form pattern hard mask layer, plasma ion implantation.
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