Plastic Flow and Dislocation Compensation in ZnS y Se 1− y /GaAs (001) Heterostructures

摘要: An important goal of lattice-mismatched semiconductor device design is control threading dislocation densities, which are particular importance for optoelectronic devices such as photodetectors and light-emitting diodes. The basis this field research an understanding the dynamics in mismatched heteroepitaxial structures. We have developed a model including multiplication, misfit–threading interactions, annihilation coalescence, thermal strain, can be used to understand strain relaxation densities arbitrarily graded ZnSySe1−y/GaAs (001) On model, we demonstrate that compensation mechanism, whereby mobile dislocations removed by insertion interface structure, explained bending over associated with misfit segments one sense having opposite sense. Dislocation compensation, if utilized structures, provide pathway attainment low (D < 106 cm−2) while using minimum total thickness epitaxial material, reduction deposition time source chemicals.