Structural, optical and electrical properties of gamma irradiated SnO thin films
作者： K.M. Abhirami , R. Sathyamoorthy , K. Asokan
DOI: 10.1016/J.RADPHYSCHEM.2013.05.030
关键词:
摘要: Abstract Present study reports the effect of gamma (γ-) irradiation various doses in range 10–200 kGy on SnO thin films prepared by conventional reactive thermal evaporation and characterized X-ray diffraction (XRD), Raman spectroscopy, Hall Effect measurement. XRD patterns irradiated upto 100 kGy show improvement crystallinity. This is evident from strong increase peak intensities corresponding to (001), (101) planes tetragonal structure. Higher result reduction crystalline nature. While spectra depict phase purity films, transmittance decreases due formation color centers. The optical bandgap 2.91 eV 2.7 eV as dose increases. electrical properties I – V characteristics showed a decrease resistance with radiation dose. shows that defects produced γ-irradiation plays major role film. possible mechanism induced discussed.
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