作者: Y. Q. Zhu , T. Sekine , T. Kobayashi , E. Takazawa
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摘要: A series of recovery experiments was conducted using a propellant single-stage gun on starting materials both α-SiC and β-SiC. X-ray examination the recovered samples indicated that obvious polytype transformations among 3C, 6H, 15R took place. To material, tends to increase 6H decrease, while small amount form transforms 3C type, along with increasing shock temperature pressure. diffraction analysis showed β-SiC is transformed into rhombohedral forms. From results types SiC samples, polytypes seem be favored modification. The effects pressure their heterogeneous distribution these transitions are discussed in detail. Analysis resulted from stacking sequence changes atom layers.